Infineon IGB50N65S5ATMA1 650V 50A IGBT Power Transistor: Datasheet, Pinout, and Application Notes
The Infineon IGB50N65S5ATMA1 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) engineered for high-power switching applications. Representing the TrenchStop™ 5 technology, this device delivers an optimal balance between low saturation voltage and minimal switching losses, making it a premier choice for demanding industrial and automotive systems.
Key Features and Datasheet Overview
The IGB50N65S5ATMA1 is designed to handle a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 50A at 100°C. Its robust construction ensures high reliability under strenuous conditions.
A deep dive into the datasheet reveals its core electrical characteristics:
Low Saturation Voltage: A typical VCE(sat) of 1.55V at IC = 50A and Tj = 125°C significantly reduces conduction losses.
Fast Switching Speed: The TrenchStop™ 5 technology enables high switching frequency operation, improving system efficiency and allowing for smaller magnetic components.
High Temperature Operation: The device is rated for a maximum junction temperature (Tj) of 175°C, providing a wide safety margin and robust performance.
Positive Temperature Coefficient: The VCE(sat) has a positive temperature coefficient, which simplifies the paralleling of multiple devices for higher current applications.
Pinout and Package
The IGB50N65S5ATMA1 is housed in a TO-247-3 package, an industry-standard through-hole design renowned for its excellent thermal and power dissipation capabilities. The pinout configuration is standard for this package:
1. Pin 1 (Gate): The control pin. A voltage applied between this pin and the emitter turns the device on.
2. Pin 2 (Collector): The high-voltage, high-current input terminal. This pin is connected to the load.
3. Pin 3 (Emitter): The output and return path for the collector current.
Proper heatsinking is crucial for maximizing the performance of this IGBT. The package is designed to be mounted onto a heatsink to effectively manage the generated thermal losses.
Application Notes
This IGBT is ideally suited for high-power, high-frequency switching circuits. Key application areas include:
Switch-Mode Power Supplies (SMPS): Particularly in Power Factor Correction (PFC) stages and inverter bridges for UPS systems.
Motor Drives and Control: Used in the inverter stage to drive motors in industrial automation, appliances, and electric vehicles.
Renewable Energy Systems: A key component in solar inverters for converting DC from photovoltaic panels to AC.
Induction Heating and Welding Equipment.
For reliable operation, follow these critical design guidelines:
Gate Driving: Use a dedicated gate driver IC to provide sufficient peak current for fast turn-on and turn-off, minimizing switching losses. A gate resistor (RG) is essential to control the switching speed and dampen ringing.
Snubber Circuits: In some applications, an RC snubber network across the collector and emitter may be necessary to suppress voltage spikes and reduce electromagnetic interference (EMI).
Thermal Management: Adequate heatsinking is non-negotiable. Always calculate the total power dissipation and ensure the junction temperature remains within safe limits, using thermal paste to improve heat transfer to the heatsink.
Freewheeling Diodes: In inductive load applications (like motor drives), a fast-recovery anti-parallel diode must be used across the IGBT to provide a path for the inductive kickback current.
ICGOOODFIND Summary
The Infineon IGB50N65S5ATMA1 stands out as a high-performance IGBT leveraging advanced TrenchStop™ 5 technology. Its excellent combination of low VCE(sat), high current capability, and 175°C junction temperature rating makes it an exceptionally robust and efficient solution for high-power industrial, automotive, and renewable energy applications. Proper attention to gate driving and thermal design is key to unlocking its full potential.
Keywords: IGBT, TrenchStop™ 5, High Power Switching, Low Saturation Voltage, Thermal Management.
