Infineon BSC031N06NS3G: 30V N-Channel MOSFET for High-Efficiency Power Management
In the realm of modern power electronics, the demand for higher efficiency, greater power density, and improved thermal performance continues to drive component innovation. Addressing these needs, the Infineon BSC031N06NS3G stands out as a high-performance 30V N-Channel MOSFET engineered specifically for demanding power management applications.
This MOSFET is built using Infineon’s advanced OptiMOS™ 6 technology, a platform renowned for significantly reducing figure-of-merit metrics like RDS(on) × Qg. The device boasts an exceptionally low on-state resistance (RDS(on)) of just 1.6 mΩ (max. at VGS = 10 V), which is a critical parameter for minimizing conduction losses. When combined with its low total gate charge (Qg), this results in superior switching performance, allowing for higher frequency operation and the design of more compact, efficient power converters.
The benefits of these characteristics are profound. In applications such as synchronous rectification in DC-DC converters, motor control systems, and load switching solutions, the BSC031N06NS3G enables substantial gains in overall system efficiency. The reduced power losses directly translate into less heat generation, which simplifies thermal management, improves reliability, and can even allow for the downsizing of heatsinks or enclosures.
Furthermore, the MOSFET’s 30V drain-source voltage rating makes it an ideal candidate for use in secondary-side post-regulation, battery management systems (BMS), and power path management in consumer electronics, telecom infrastructure, and computing platforms. Its robust design ensures high reliability under strenuous conditions, supported by a qualified 100% avalanche tested process.
The device is offered in a space-saving SuperSO8 package, which provides an excellent power-to-footprint ratio. This makes it particularly valuable for space-constrained applications where board real estate is at a premium. The package also offers improved thermal characteristics compared to standard SO-8 alternatives.
ICGOOODFIND: The Infineon BSC031N06NS3G is a benchmark 30V MOSFET that delivers a winning combination of ultra-low RDS(on), minimal switching losses, and excellent thermal performance through its OptiMOS™ 6 technology, making it a top-tier choice for designers aiming to maximize efficiency in modern power management systems.
Keywords: OptiMOS™ 6 Technology, Low RDS(on), Synchronous Rectification, High-Efficiency, Power Management.
