Infineon IPB60R360P7: A High-Performance CoolMOS™ Power Transistor for Efficient Switching Applications

Release date:2025-11-05 Number of clicks:64

Infineon IPB60R360P7: A High-Performance CoolMOS™ Power Transistor for Efficient Switching Applications

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB60R360P7 stands out as a premier solution, engineered to meet the rigorous demands of modern high-efficiency switching applications. As part of Infineon’s renowned CoolMOS™ P7 series, this power MOSFET sets a new benchmark for performance in circuits requiring high switching frequencies and low power dissipation.

Designed with advanced superjunction technology, the IPB60R360P7 offers an impressive low on-state resistance (RDS(on)) of just 360 mΩ at maximum gate voltage. This characteristic is crucial for minimizing conduction losses, which directly translates to higher overall system efficiency and reduced heat generation. The device is rated for 650 V drain-source voltage, making it exceptionally suitable for a wide range of offline power supplies, including server and telecom SMPS (Switched-Mode Power Supplies), industrial motor drives, and photovoltaic inverters.

A key highlight of the CoolMOS™ P7 technology is its exceptional switching performance. The transistor features optimized internal capacitances and an ultra-low gate charge (QG), which allows for faster switching transitions. This not only improves efficiency in high-frequency operation but also reduces electromagnetic interference (EMI), simplifying filter design and compliance with regulatory standards.

Thermal management is another area where the IPB60R360P7 excels. The TO-263 (D2PAK) package ensures low thermal resistance, enabling effective heat dissipation and allowing the device to operate reliably at high power levels. This robust thermal performance is vital for maintaining longevity and stability in demanding environments.

Furthermore, the component incorporates integrated additional features such as a fast body diode and high avalanche ruggedness. These attributes enhance its reliability in hard-switching and inductive load applications, providing designers with greater margin against voltage spikes and unexpected transients.

ICGOOODFIND: The Infineon IPB60R360P7 CoolMOS™ represents a optimal blend of low conduction loss, high switching speed, and robust thermal performance, making it an outstanding choice for next-generation high-efficiency power conversion systems.

Keywords:

CoolMOS™ P7

High Efficiency

Low RDS(on)

Fast Switching

650V Rating

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