Infineon IPA60R800CE 800V CoolMOS™ Power Transistor for High-Efficiency Switching Applications

The continuous evolution of power electronics demands components that deliver higher efficiency, greater power density, and superior reliability. At the forefront of this innovation is Infineon Technologies' IPA60R800CE, an 800V CoolMOS™ power transistor engineered specifically for high-performance switching applications. This device exemplifies the advanced superjunction technology that has made the CoolMOS™ family a benchmark in the industry.

A key strength of the IPA60R800CE lies in its exceptionally low effective dynamic losses. This is achieved through Infineon's proprietary charge compensation principle, which enables a significantly reduced figure-of-merit (RDS(on) x Qg). The result is a transistor that offers minimal conduction and switching losses, which is paramount for achieving high efficiency in systems operating at high switching frequencies. Designers can leverage this to create smaller, more compact power supplies by using smaller magnetics and filter components without sacrificing performance.

The 800V breakdown voltage provides a robust safety margin for operations in universal mains applications (85 VAC – 305 VAC), making it an ideal choice for switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting controls, and industrial motor drives. This high voltage capability enhances system reliability, especially in environments prone to voltage spikes and unpredictable transients.

Furthermore, the IPA60R800CE boasts excellent switching behavior and high avalanche ruggedness. Its fast switching speed minimizes the time spent in the high-loss transition region, further boosting efficiency. The high avalanche energy capability ensures the device can withstand stressful conditions, such as inductive load turn-off, thereby improving the overall robustness of the end application. Its low gate charge also simplifies drive requirements, allowing for the use of less complex and more cost-effective gate driver circuits.

ICGOOODFIND: The Infineon IPA60R800CE stands as a superior component for engineers focused on pushing the limits of efficiency and power density. Its optimal balance of low RDS(on), low gate charge, and high voltage robustness makes it a versatile and highly reliable solution for demanding high-frequency switching power designs.

Keywords: High Efficiency, 800V Breakdown Voltage, Superjunction Technology, Low Switching Losses, Power Density.